PLEASE NOTE: We are NOT A LOGISTICS COMPANY and do NOT BUY, SELL, OR TRADE any products.
PLEASE NOTE: We are NOT A LOGISTICS COMPANY and do NOT BUY, SELL, OR TRADE any products.
Live Semiconductor Export Data of Vietnam by HS Code 85419000 via port Long Binh Export Processing Zone Headquarters. Our Vietnam 85419000 Customs data and Vietnam 85419000 Data by HS Code or port include HS code, Date, Value, Product Description, Loading and Unloading Ports, Vietnam Exporter/Importer Name, Quantity, etc.
| Date | HS Code | Product Description | DESTINATION COUNTRY | Custom Name | QTY. | UNIT | Value($) | Importer Name |
|---|---|---|---|---|---|---|---|---|
| 2024-04-01 00:00:00 | 85419000 | F941REV1#&Semiconductor base (in antenna dish) FSX017LG/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion power: 0.1W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 258 | PCE | 299.28 | Importer Name |
| 2024-04-03 00:00:00 | 85419000 | U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 2500 | PCE | 2775 | Importer Name |
| 2024-04-03 00:00:00 | 85419000 | F941REV2#&Semiconductor substrate that can withstand high voltage (in the antenna dish)-FSX017LGT/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion capacity: 0.1W#&KXĐ | Japan | Long Binh Export Processing Zone Headquarters | 1000 | PCE | 1180 | Importer Name |
| 2024-04-04 00:00:00 | 85419000 | U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 2500 | PCE | 2775 | Importer Name |
| 2024-04-09 00:00:00 | 85419000 | F941REV2#&Semiconductor substrate that can withstand high voltage (in the antenna dish)-FSX017LGT/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion capacity: 0.1W#&KXĐ | Japan | Long Binh Export Processing Zone Headquarters | 2000 | PCE | 2360 | Importer Name |
| 2024-04-10 00:00:00 | 85419000 | F941REV2#&Semiconductor substrate that can withstand high voltage (in the antenna dish)-FSX017LGT/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion capacity: 0.1W#&KXĐ | Japan | Long Binh Export Processing Zone Headquarters | 500 | PCE | 590 | Importer Name |
| 2024-04-11 00:00:00 | 85419000 | U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 2500 | PCE | 2775 | Importer Name |
| 2024-04-16 00:00:00 | 85419000 | U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 2500 | PCE | 2775 | Importer Name |
| 2024-04-17 00:00:00 | 85419000 | U0019REV1#&Semiconductor base (in antenna dish)-FHX35LPT/HIGH ELECTRON MOBILITY TRANSISTOR.Conversion capacity: 0.00132W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 2500 | PCE | 2775 | Importer Name |
| 2024-04-19 00:00:00 | 85419000 | F941REV1#&Semiconductor base (in antenna dish) FSX017LG/GAAS FET(FIELD EFFECT TRANSISTOR).Conversion power: 0.1W#&KXD | Japan | Long Binh Export Processing Zone Headquarters | 264 | PCE | 306.24 | Importer Name |